Transistor Type:
NPN
Dimensions:
2.38 x 6.73 x 6.22mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.56 W
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Voltage:
100 V
Maximum Emitter Base Voltage:
5 V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
3 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
100 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
DC Current Gain (hFE) (Min) @ Ic, Vce:
10 @ 3A, 4V
Frequency - Transition:
3MHz
title:
MJD31CG
REACH Status:
REACH Unaffected
edacadModel:
MJD31CG Models
edacadModelUrl:
/en/models/1481767
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
1.2V @ 375mA, 3A
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
9 Weeks
Current - Collector Cutoff (Max):
50µA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DPAK
Packaging:
Tube
Power - Max:
1.56 W
Base Product Number:
MJD31
ECCN:
EAR99
