Minimum DC Current Gain:
50
Transistor Type:
NPN
Dimensions:
10.28 x 4.82 x 15.75mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
100 W
Maximum Continuous Collector Current:
8 A
Maximum Collector Emitter Voltage:
400 V
Maximum Base Emitter Saturation Voltage:
3.5 V
Maximum Collector Cut-off Current:
5mA
Height:
15.75mm
Width:
4.82mm
Length:
10.28mm
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
3 V
Maximum Emitter Base Voltage:
8 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
8 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
400 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2A, 5V
Frequency - Transition:
-
REACH Status:
REACH Unaffected
edacadModel:
MJE5742G Models
edacadModelUrl:
/en/models/919522
Transistor Type:
NPN - Darlington
Vce Saturation (Max) @ Ib, Ic:
3V @ 400mA, 8A
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
14 Weeks
Current - Collector Cutoff (Max):
-
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220
Packaging:
Tube
Power - Max:
2 W
Base Product Number:
MJE5742
ECCN:
EAR99
