onsemi MJ11032G NPN Darlington Transistor, 50 A 120 V HFE:400, 2-Pin TO-204

MJ11032G onsemi  NPN Darlington Transistor, 50 A 120 V HFE:400, 2-Pin TO-204
MJ11032G
onsemi

Product Information

Minimum DC Current Gain:
400
Transistor Type:
NPN
Dimensions:
38.86 x 26.67 x 8.51mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
300 W
Maximum Continuous Collector Current:
50 A
Maximum Collector Base Voltage:
120 V
Maximum Collector Emitter Voltage:
120 V
Maximum Base Emitter Saturation Voltage:
4.5 V
Height:
8.51mm
Width:
26.67mm
Length:
38.86mm
Package Type:
TO-204
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
3.5 V
Maximum Emitter Base Voltage:
5 V
Maximum Operating Temperature:
+200 °C
Pin Count:
2
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
50 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
120 V
Operating Temperature:
-55°C ~ 200°C (TJ)
Package / Case:
TO-204AE
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 25A, 5V
edacadModel:
MJ11032G Models
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
3.5V @ 500mA, 50A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/919446
Transistor Type:
NPN - Darlington
Package:
Tray
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
15 Weeks
Current - Collector Cutoff (Max):
2mA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-204 (TO-3)
Power - Max:
300 W
Base Product Number:
MJ11032
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is NPN Darlington Transistor 50 A 120 V HFE:400 2-Pin TO-204 manufactured by onsemi. The manufacturer part number is MJ11032G. It features up to 400 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 38.86 x 26.67 x 8.51mm. The product is available in through hole configuration. Provides up to 300 w maximum power dissipation. The product has a maximum 50 a continuous collector current . Additionally, it has 120 v maximum collector base voltage. Whereas features a 120 v of collector emitter voltage (max). In addition, the product has a maximum 4.5 v base emitter saturation voltage . In addition, the height is 8.51mm. Furthermore, the product is 26.67mm wide. Its accurate length is 38.86mm. The package is a sort of to-204. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. The product has a maximum 3.5 v collector emitter saturation voltage . It features a 5 v of maximum emitter base voltage. It has a maximum operating temperature of +200 °c. It contains 2 pins. The product offers single transistor configuration. The maximum collector current includes 50 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 120 v. The product has -55°c ~ 200°c (tj) operating temperature range. Moreover, the product comes in to-204ae. Furthermore, 1000 @ 25a, 5v is the minimum DC current gain at given voltage. The 3.5v @ 500ma, 50a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn - darlington type. It is shipped in tray package . Its typical moisture sensitivity level is not applicable. It has a long 15 weeks standard lead time. In addition, 2ma is the maximum current at collector cutoff. to-204 (to-3) is the supplier device package value. The maximum power of the product is 300 w. Moreover, it corresponds to mj11032, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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MJ11028,29,30,32,33(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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FAQs

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