Minimum DC Current Gain:
750
Transistor Type:
NPN
Dimensions:
7.74 x 2.66 x 11.04mm
Mounting Type:
Through Hole
Maximum Emitter Base Voltage:
5 V
Maximum Continuous Collector Current:
4 A
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Voltage:
100 V
Maximum Collector Cut-off Current:
0.2mA
Height:
11.04mm
Width:
2.66mm
Length:
7.74mm
Package Type:
TO-225
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
2.5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
4 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
100 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-225AA, TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 1.5A, 3V
Frequency - Transition:
-
title:
BD681G
REACH Status:
REACH Unaffected
Transistor Type:
NPN - Darlington
Vce Saturation (Max) @ Ib, Ic:
2.5V @ 30mA, 1.5A
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
15 Weeks
Current - Collector Cutoff (Max):
500µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-126
Packaging:
Bulk
Power - Max:
40 W
Base Product Number:
BD681
ECCN:
EAR99
