onsemi MJH6284G NPN Darlington Transistor, 20 A 100 V HFE:100, 3-Pin TO-247

MJH6284G onsemi  NPN Darlington Transistor, 20 A 100 V HFE:100, 3-Pin TO-247
MJH6284G
onsemi

Product Information

Dimensions:
16.26 x 5.3 x 21.08mm
Maximum Collector Emitter Saturation Voltage:
3 V
Maximum Collector Cut-off Current:
5mA
Width:
5.3mm
Transistor Configuration:
Single
Maximum Continuous Collector Current:
20 A
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
4 V
Maximum Emitter Base Voltage:
5 V
Length:
16.26mm
Pin Count:
3
Minimum DC Current Gain:
100
Mounting Type:
Through Hole
Maximum Power Dissipation:
160 W
Maximum Collector Emitter Voltage:
100 V
Height:
21.08mm
Minimum Operating Temperature:
-65 °C
Current - Collector (Ic) (Max):
20 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
100 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-247-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 10A, 3V
Frequency - Transition:
4MHz
Vce Saturation (Max) @ Ib, Ic:
3V @ 200mA, 20A
REACH Status:
REACH Unaffected
Transistor Type:
NPN - Darlington
Package:
Tube
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
15 Weeks
Current - Collector Cutoff (Max):
1mA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-3
Power - Max:
160 W
Base Product Number:
MJH6284
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is NPN Darlington Transistor 20 A 100 V HFE:100 3-Pin TO-247 manufactured by onsemi. The manufacturer part number is MJH6284G. The given dimensions of the product include 16.26 x 5.3 x 21.08mm. The product has a maximum 3 v collector emitter saturation voltage . It has a maximum 5ma collector cut-off current . Furthermore, the product is 5.3mm wide. The product offers single transistor configuration. The product has a maximum 20 a continuous collector current . The package is a sort of to-247. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. The transistor is a npn type. Additionally, it has 100 v maximum collector base voltage. In addition, the product has a maximum 4 v base emitter saturation voltage . It features a 5 v of maximum emitter base voltage. Its accurate length is 16.26mm. It contains 3 pins. It features up to 100 of minimum DC current gain. The product is available in through hole configuration. Provides up to 160 w maximum power dissipation. Whereas features a 100 v of collector emitter voltage (max). In addition, the height is 21.08mm. Whereas, the minimum operating temperature of the product is -65 °c. The maximum collector current includes 20 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 100 v. The product has -65°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. Furthermore, 750 @ 10a, 3v is the minimum DC current gain at given voltage. The transition frequency of the product is 4mhz. The 3v @ 200ma, 20a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn - darlington type. It is shipped in tube package . Its typical moisture sensitivity level is not applicable. It has a long 15 weeks standard lead time. In addition, 1ma is the maximum current at collector cutoff. to-247-3 is the supplier device package value. The maximum power of the product is 160 w. Moreover, it corresponds to mjh6284, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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MJH6284/87(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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TO-218 to TO-247 09/Mar/2012(PCN Packaging)

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