ON Semi MJD127T4G PNP Darlington Transistor, 8 A 100 V HFE:100, 3-Pin DPAK

MJD127T4G ON Semi  PNP Darlington Transistor, 8 A 100 V HFE:100, 3-Pin DPAK
MJD127T4G
MJD127T4G
onsemi

Product Information

Minimum DC Current Gain:
100
Transistor Type:
PNP
Dimensions:
6.73 x 6.22 x 2.38mm
Mounting Type:
Surface Mount
Maximum Emitter Base Voltage:
5 V
Maximum Continuous Collector Current:
8 A
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
4.5 V
Maximum Collector Cut-off Current:
0.01mA
Height:
2.38mm
Width:
6.22mm
Length:
6.73mm
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
4 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
8 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
100 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 4A, 4V
Frequency - Transition:
4MHz
Vce Saturation (Max) @ Ib, Ic:
4V @ 80mA, 8A
REACH Status:
REACH Unaffected
Transistor Type:
PNP - Darlington
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
14 Weeks
Current - Collector Cutoff (Max):
10µA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DPAK
Power - Max:
1.75 W
Base Product Number:
MJD127
ECCN:
EAR99
Checking for live stock

This is ON Semi PNP Darlington Transistor 8 A 100 V HFE:100 3-Pin DPAK manufactured by onsemi. The manufacturer part number is MJD127T4G. It features up to 100 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 6.73 x 6.22 x 2.38mm. The product is available in surface mount configuration. It features a 5 v of maximum emitter base voltage. The product has a maximum 8 a continuous collector current . Additionally, it has 100 v maximum collector base voltage. Whereas features a 100 v of collector emitter voltage (max). In addition, the product has a maximum 4.5 v base emitter saturation voltage . It has a maximum 0.01ma collector cut-off current . In addition, the height is 2.38mm. Furthermore, the product is 6.22mm wide. Its accurate length is 6.73mm. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. The product has a maximum 4 v collector emitter saturation voltage . It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 8 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 100 v. The product has -65°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Furthermore, 1000 @ 4a, 4v is the minimum DC current gain at given voltage. The transition frequency of the product is 4mhz. The 4v @ 80ma, 8a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a pnp - darlington type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 14 weeks standard lead time. In addition, 10µa is the maximum current at collector cutoff. dpak is the supplier device package value. The maximum power of the product is 1.75 w. Moreover, it corresponds to mjd127, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Assembly /Test Change 11/Apr/2023(PCN Assembly/Origin)
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MJD122_127, NJVMJD122_127(Datasheets)
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onsemi RoHS(Environmental Information)

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FAQs

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