Infineon BCV61BE6327HTSA1 Dual NPN Darlington Pair, 100 mA 30 V HFE:100, 4-Pin SOT-143

BCV61BE6327HTSA1 Infineon  Dual NPN Darlington Pair, 100 mA 30 V HFE:100, 4-Pin SOT-143
Infineon

Product Information

Minimum DC Current Gain:
100
Transistor Type:
NPN
Dimensions:
2.9 x 1.3 x 0.9mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 mW
Maximum Continuous Collector Current:
100 mA
Maximum Collector Base Voltage:
30 V
Maximum Collector Emitter Voltage:
30 V
Maximum Base Emitter Saturation Voltage:
900 mV
Maximum Collector Cut-off Current:
5µA
Height:
0.9mm
Width:
1.3mm
Length:
2.9mm
Package Type:
SOT-143
Number of Elements per Chip:
2
Maximum Collector Emitter Saturation Voltage:
600 mV
Maximum Emitter Base Voltage:
6 V
Maximum Operating Temperature:
+150 °C
Pin Count:
4
RoHs Compliant
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This is Dual NPN Darlington Pair 100 mA 30 V HFE:100 4-Pin SOT-143 manufactured by Infineon. The manufacturer part number is BCV61BE6327HTSA1. It features up to 100 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 2.9 x 1.3 x 0.9mm. The product is available in surface mount configuration. Provides up to 300 mw maximum power dissipation. The product has a maximum 100 ma continuous collector current . Additionally, it has 30 v maximum collector base voltage. Whereas features a 30 v of collector emitter voltage (max). In addition, the product has a maximum 900 mv base emitter saturation voltage . It has a maximum 5µa collector cut-off current . In addition, the height is 0.9mm. Furthermore, the product is 1.3mm wide. Its accurate length is 2.9mm. The package is a sort of sot-143. It consists of 2 elements per chip. The product has a maximum 600 mv collector emitter saturation voltage . It features a 6 v of maximum emitter base voltage. It has a maximum operating temperature of +150 °c. It contains 4 pins.

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BCV61, NPN Silicon Double Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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