Minimum DC Current Gain:
1000
Transistor Type:
NPN
Maximum Collector Base Voltage:
100 V
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1 W
Maximum Continuous Collector Current:
1.5 A
Maximum Collector Emitter Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
2 V
Maximum Collector Cut-off Current:
0.2µA
Maximum Emitter Base Voltage:
12 V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
1.5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3 + Tab
Transistor Configuration:
Single
Base Part Number:
NZT70
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 100V 1.5A 200MHz 1W Surface Mount SOT-223-4
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 1A, 5V
Transistor Type:
NPN - Darlington
Frequency - Transition:
200MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 100µA, 100mA
Supplier Device Package:
SOT-223-4
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
1W
Customer Reference:
Package / Case:
TO-261-4, TO-261AA
Current - Collector (Ic) (Max):
1.5A
Current - Collector Cutoff (Max):
200nA
Manufacturer:
ON Semiconductor
