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STMicroelectronics MJD122T4

MJD122T4 STMicroelectronics
MJD122T4
MJD122T4
STMicroelectronics

Product Information

Minimum DC Current Gain:
100
Transistor Type:
NPN
Dimensions:
6.6 x 6.2 x 2.4mm
Mounting Type:
Surface Mount
Maximum Emitter Base Voltage:
5 V
Maximum Continuous Collector Current:
16 A
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
4.5 V
Maximum Collector Cut-off Current:
0.01mA
Height:
2.4mm
Width:
6.2mm
Length:
6.6mm
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
4 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
8 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
100 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 4A, 4V
Frequency - Transition:
-
REACH Status:
REACH Unaffected
edacadModel:
MJD122T4 Models
edacadModelUrl:
/en/models/603494
Transistor Type:
NPN - Darlington
Vce Saturation (Max) @ Ib, Ic:
4V @ 80mA, 8A
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
14 Weeks
Current - Collector Cutoff (Max):
10µA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DPAK
Packaging:
Tape & Reel (TR)
Power - Max:
20 W
Base Product Number:
MJD122
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is MJD122T4. It features up to 100 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 6.6 x 6.2 x 2.4mm. The product is available in surface mount configuration. It features a 5 v of maximum emitter base voltage. The product has a maximum 16 a continuous collector current . Additionally, it has 100 v maximum collector base voltage. Whereas features a 100 v of collector emitter voltage (max). In addition, the product has a maximum 4.5 v base emitter saturation voltage . It has a maximum 0.01ma collector cut-off current . In addition, the height is 2.4mm. Furthermore, the product is 6.2mm wide. Its accurate length is 6.6mm. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. The product has a maximum 4 v collector emitter saturation voltage . It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 8 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 100 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Furthermore, 1000 @ 4a, 4v is the minimum DC current gain at given voltage. In addition, it is reach unaffected. The transistor is a npn - darlington type. The 4v @ 80ma, 8a is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). It has a long 14 weeks standard lead time. In addition, 10µa is the maximum current at collector cutoff. dpak is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 20 w. Moreover, it corresponds to mjd122, a base product number of the product. The product is designated with the ear99 code number.

pdf icon
MJD122 MJD127 Complementary power Darlington transistors Data Sheet(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)
pdf icon
MJD122,MJD127(Datasheets)

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