STMicroelectronics STP03D200

STP03D200 STMicroelectronics
STP03D200
STP03D200
STMicroelectronics

Product Information

Minimum DC Current Gain:
230 @ 20 mA @ 10 V
Transistor Type:
NPN
Dimensions:
10.4 x 4.6 x 15.75mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
40 W
Maximum Continuous Collector Current:
100 mA
Maximum Collector Base Voltage:
2000 V
Maximum Collector Emitter Voltage:
1200 V
Maximum Base Emitter Saturation Voltage:
2 V
Maximum Collector Cut-off Current:
100µA
Height:
15.75mm
Width:
4.6mm
Length:
10.4mm
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum Collector Emitter Saturation Voltage:
2 V
Maximum Emitter Base Voltage:
20 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
100 mA
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
1200 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 30mA, 10V
Frequency - Transition:
-
title:
STP03D200
REACH Status:
REACH Unaffected
edacadModel:
STP03D200 Models
edacadModelUrl:
/en/models/1880212
Transistor Type:
NPN - Darlington
Vce Saturation (Max) @ Ib, Ic:
2V @ 500µA, 50mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
14 Weeks
Current - Collector Cutoff (Max):
100µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220
Packaging:
Tube
Power - Max:
40 W
Base Product Number:
STP03
ECCN:
EAR99
RoHs Compliant
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This is manufactured by STMicroelectronics. The manufacturer part number is STP03D200. It features up to 230 @ 20 ma @ 10 v of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 10.4 x 4.6 x 15.75mm. The product is available in through hole configuration. Provides up to 40 w maximum power dissipation. The product has a maximum 100 ma continuous collector current . Additionally, it has 2000 v maximum collector base voltage. Whereas features a 1200 v of collector emitter voltage (max). In addition, the product has a maximum 2 v base emitter saturation voltage . It has a maximum 100µa collector cut-off current . In addition, the height is 15.75mm. Furthermore, the product is 4.6mm wide. Its accurate length is 10.4mm. The package is a sort of to-220. It consists of 1 elements per chip. The product has a maximum 2 v collector emitter saturation voltage . It features a 20 v of maximum emitter base voltage. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 100 ma. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 1200 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. Furthermore, 200 @ 30ma, 10v is the minimum DC current gain at given voltage. In addition, it is reach unaffected. The transistor is a npn - darlington type. The 2v @ 500µa, 50ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). It has a long 14 weeks standard lead time. In addition, 100µa is the maximum current at collector cutoff. to-220 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 40 w. Moreover, it corresponds to stp03, a base product number of the product. The product is designated with the ear99 code number.

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STP03D200, 2kV NPN Darlington Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Dev Assembly Site 11/Jul/2024(PCN Assembly/Origin)
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STP03D200(Datasheets)

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