Minimum DC Current Gain:
200
Transistor Type:
NPN
Dimensions:
39.37 x 26.67 x 8.51mm
Mounting Type:
Through Hole
Maximum Emitter Base Voltage:
5 V
Maximum Continuous Collector Current:
30 A
Maximum Collector Base Voltage:
120 V
Maximum Collector Emitter Voltage:
120 V
Maximum Base Emitter Saturation Voltage:
5 V
Height:
8.51mm
Width:
26.67mm
Length:
39.37mm
Package Type:
TO-204
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
4 V
Maximum Operating Temperature:
+200 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
9 Weeks
Base Part Number:
MJ11016
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 120V 30A 4MHz 200W Through Hole TO-204 (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 20A, 5V
Transistor Type:
NPN - Darlington
Frequency - Transition:
4MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
4V @ 300mA, 30A
Supplier Device Package:
TO-204 (TO-3)
Voltage - Collector Emitter Breakdown (Max):
120V
Packaging:
Tray
Operating Temperature:
-55°C ~ 200°C (TJ)
Power - Max:
200W
Customer Reference:
Package / Case:
TO-204AA, TO-3
Current - Collector (Ic) (Max):
30A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
