Minimum DC Current Gain:
750
Transistor Type:
NPN
Dimensions:
7.8 x 2.7 x 10.8mm
Mounting Type:
Through Hole
Maximum Emitter Base Voltage:
5 V
Maximum Continuous Collector Current:
4 A
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
80 V
Maximum Collector Cut-off Current:
0.2mA
Height:
10.8mm
Width:
2.7mm
Length:
7.8mm
Package Type:
SOT-32
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
2.8 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
8 Weeks
Base Part Number:
BD679
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole SOT-32-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 2A, 3V
Transistor Type:
NPN - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2.8V @ 40mA, 2A
Supplier Device Package:
SOT-32-3
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
40W
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
4A
Current - Collector Cutoff (Max):
500µA
Manufacturer:
STMicroelectronics
