ON Semiconductor, BC847BPDW1T3G

ON Semiconductor

Product Information

Transistor Type:
NPN + PNP
Dimensions:
2.2 x 1.35 x 1mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
380 mW
Maximum Collector Emitter Saturation Voltage:
0.6 V
Maximum Collector Base Voltage:
50 V
Maximum Collector Emitter Voltage:
45 V
Maximum Base Emitter Saturation Voltage:
0.9 V
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
6 V
Package Type:
SOT-363
Number of Elements per Chip:
2
Maximum DC Collector Current:
100 (Continuous) mA, 200 (Peak) mA
Maximum Operating Temperature:
+150 °C
Pin Count:
6
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is BC847BPDW1T3G. The transistor is a npn + pnp type. The given dimensions of the product include 2.2 x 1.35 x 1mm. The product is available in surface mount configuration. Provides up to 380 mw maximum power dissipation. The product has a maximum 0.6 v collector emitter saturation voltage . Additionally, it has 50 v maximum collector base voltage. Whereas features a 45 v of collector emitter voltage (max). In addition, the product has a maximum 0.9 v base emitter saturation voltage . It carries 100 mhz of maximum operating frequency. It features a 6 v of maximum emitter base voltage. The package is a sort of sot-363. It consists of 2 elements per chip. Moreover, it has a maximum DC collector current of 100 (continuous) ma, 200 (peak) ma. It has a maximum operating temperature of +150 °c. It contains 6 pins.

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Datasheet BC847BPDW1T3G(Technical Reference)

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