NXP BFS540,115 NPN Transistor, 120 mA, 15 V, 3-Pin UMT

BFS540-115 NXP BFS540,115 NPN Transistor, 120 mA, 15 V, 3-Pin UMT
BFS540,115
BFS540,115
ET16889909
ET16889909
BJT & Bipolar Transistors
BJT & Bipolar Transistors
BFS540-115 NXP BFS540,115 NPN Transistor, 120 mA, 15 V, 3-Pin UMTNXP
NXP

Product Information

Minimum DC Current Gain:
100
Transistor Type:
NPN
Dimensions:
1 x 2.2 x 1.35mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Maximum Collector Base Voltage:
20 V
Maximum Collector Emitter Voltage:
15 V
Maximum Operating Frequency:
9000 MHz
Height:
1mm
Width:
1.35mm
Length:
2.2mm
Package Type:
UMT
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum DC Collector Current:
120 mA
Maximum Emitter Base Voltage:
2.5 V
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is NPN Transistor 120 mA 15 V 3-Pin UMT manufactured by NXP. The manufacturer part number is BFS540,115. It features up to 100 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 1 x 2.2 x 1.35mm. The product is available in surface mount configuration. Provides up to 500 mw maximum power dissipation. Additionally, it has 20 v maximum collector base voltage. Whereas features a 15 v of collector emitter voltage (max). It carries 9000 mhz of maximum operating frequency. In addition, the height is 1mm. Furthermore, the product is 1.35mm wide. Its accurate length is 2.2mm. The package is a sort of umt. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. Moreover, it has a maximum DC collector current of 120 ma. It features a 2.5 v of maximum emitter base voltage. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.

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BFS540 NPN 9 GHz wideband transistor Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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