NXP BFG410W,115 NPN Transistor, 12 mA, 4.5 V, 4-Pin CMPAK

BFG410W-115 NXP BFG410W,115 NPN Transistor, 12 mA, 4.5 V, 4-Pin CMPAK
BFG410W,115
BFG410W,115
ET16843291
ET16843291
BJT & Bipolar Transistors
BJT & Bipolar Transistors
NXP

Product Information

Minimum DC Current Gain:
50
Transistor Type:
NPN
Dimensions:
1 x 2.2 x 1.35mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
54 mW
Maximum Collector Base Voltage:
10 V
Maximum Collector Emitter Voltage:
4.5 V
Maximum Operating Frequency:
22000 MHz
Height:
1mm
Width:
1.35mm
Length:
2.2mm
Package Type:
CMPAK
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum DC Collector Current:
12 mA
Maximum Emitter Base Voltage:
1 V
Maximum Operating Temperature:
+150 °C
Pin Count:
4
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is NPN Transistor 12 mA 4.5 V 4-Pin CMPAK manufactured by NXP. The manufacturer part number is BFG410W,115. It features up to 50 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 1 x 2.2 x 1.35mm. The product is available in surface mount configuration. Provides up to 54 mw maximum power dissipation. Additionally, it has 10 v maximum collector base voltage. Whereas features a 4.5 v of collector emitter voltage (max). It carries 22000 mhz of maximum operating frequency. In addition, the height is 1mm. Furthermore, the product is 1.35mm wide. Its accurate length is 2.2mm. The package is a sort of cmpak. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. Moreover, it has a maximum DC collector current of 12 ma. It features a 1 v of maximum emitter base voltage. It has a maximum operating temperature of +150 °c. It contains 4 pins. The product offers single transistor configuration.

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BFG410W NPN 22GHz wideband transistor Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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