Infineon BC857BE6433HTMA1 PNP Transistor, 100 mA, 45 V, 3-Pin SOT-23

BC857BE6433HTMA1 Infineon  PNP Transistor, 100 mA, 45 V, 3-Pin SOT-23
BC857BE6433HTMA1
Infineon

Product Information

Dimensions:
2.9 x 1.3 x 0.9mm
Maximum Collector Emitter Saturation Voltage:
650 mV
Transistor Material:
Si
Width:
1.3mm
Transistor Configuration:
Single
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
PNP
Maximum Collector Base Voltage:
50 V
Maximum Base Emitter Saturation Voltage:
850 mV
Maximum Emitter Base Voltage:
5 V
Length:
2.9mm
Maximum DC Collector Current:
100 mA
Pin Count:
3
Minimum DC Current Gain:
125
Mounting Type:
Surface Mount
Maximum Power Dissipation:
330 mW
Maximum Collector Emitter Voltage:
45 V
Height:
0.9mm
RoHs Compliant
Checking for live stock

This is PNP Transistor 100 mA 45 V 3-Pin SOT-23 manufactured by Infineon. The manufacturer part number is BC857BE6433HTMA1. The given dimensions of the product include 2.9 x 1.3 x 0.9mm. The product has a maximum 650 mv collector emitter saturation voltage . The transistor is manufactured from highly durable si material. Furthermore, the product is 1.3mm wide. The product offers single transistor configuration. The package is a sort of sot-23. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. The transistor is a pnp type. Additionally, it has 50 v maximum collector base voltage. In addition, the product has a maximum 850 mv base emitter saturation voltage . It features a 5 v of maximum emitter base voltage. Its accurate length is 2.9mm. Moreover, it has a maximum DC collector current of 100 ma. It contains 3 pins. It features up to 125 of minimum DC current gain. The product is available in surface mount configuration. Provides up to 330 mw maximum power dissipation. Whereas features a 45 v of collector emitter voltage (max). In addition, the height is 0.9mm.

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BC857-860 PNP Silicon AF Transistors(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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