Infineon BFS17SH6327XTSA1 NPN RF Bipolar Transistor, 25 mA, 15 V, 6-Pin SOT-363

BFS17SH6327XTSA1 Infineon  NPN RF Bipolar Transistor, 25 mA, 15 V, 6-Pin SOT-363
BFS17SH6327XTSA1
Infineon

Product Information

Minimum DC Current Gain:
40
Transistor Type:
NPN
Dimensions:
2 x 1.25 x 0.8mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
280 mW
Maximum Collector Emitter Saturation Voltage:
0.4 V
Maximum Collector Base Voltage:
25 V
Maximum Collector Emitter Voltage:
15 V
Maximum Operating Frequency:
2.5 GHz
Height:
0.8mm
Width:
1.25mm
Length:
2mm
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
1
Maximum DC Collector Current:
25 mA
Maximum Emitter Base Voltage:
2.5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is NPN RF Bipolar Transistor 25 mA 15 V 6-Pin SOT-363 manufactured by Infineon. The manufacturer part number is BFS17SH6327XTSA1. It features up to 40 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 2 x 1.25 x 0.8mm. The product is available in surface mount configuration. Provides up to 280 mw maximum power dissipation. The product has a maximum 0.4 v collector emitter saturation voltage . Additionally, it has 25 v maximum collector base voltage. Whereas features a 15 v of collector emitter voltage (max). It carries 2.5 ghz of maximum operating frequency. In addition, the height is 0.8mm. Furthermore, the product is 1.25mm wide. Its accurate length is 2mm. The package is a sort of sot-363 (sc-88). It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 25 ma. It features a 2.5 v of maximum emitter base voltage. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers single transistor configuration.

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ESD Control Selection Guide V1(Technical Reference)
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BFS17S NPN Silicon RF Transistor Datasheet(Technical Reference)

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