NXP BFQ67W,115 NPN Transistor, 50 mA, 10 V, 3-Pin UMT

BFQ67W-115 NXP BFQ67W,115 NPN Transistor, 50 mA, 10 V, 3-Pin UMT
BFQ67W,115
BFQ67W,115
NXP

Product Information

Minimum DC Current Gain:
60
Transistor Type:
NPN
Dimensions:
1 x 2.2 x 1.35mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 mW
Maximum Collector Base Voltage:
20 V
Maximum Collector Emitter Voltage:
10 V
Maximum Operating Frequency:
8000 MHz
Height:
1mm
Width:
1.35mm
Length:
2.2mm
Package Type:
UMT
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum DC Collector Current:
50 mA
Maximum Emitter Base Voltage:
2.5 V
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is NPN Transistor 50 mA 10 V 3-Pin UMT manufactured by NXP. The manufacturer part number is BFQ67W,115. It features up to 60 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 1 x 2.2 x 1.35mm. The product is available in surface mount configuration. Provides up to 300 mw maximum power dissipation. Additionally, it has 20 v maximum collector base voltage. Whereas features a 10 v of collector emitter voltage (max). It carries 8000 mhz of maximum operating frequency. In addition, the height is 1mm. Furthermore, the product is 1.35mm wide. Its accurate length is 2.2mm. The package is a sort of umt. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. Moreover, it has a maximum DC collector current of 50 ma. It features a 2.5 v of maximum emitter base voltage. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.

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ESD Control Selection Guide V1(Technical Reference)
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BFQ67W NPN 8 GHz wideband transistor Data sheet(Technical Reference)

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