Minimum DC Current Gain:
110
Transistor Type:
PNP
Dimensions:
5.2 x 4.19 x 5.33mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
500 mW
Maximum Collector Emitter Saturation Voltage:
-650 V
Maximum Collector Base Voltage:
-80 V
Maximum Collector Emitter Voltage:
65 V
Maximum Base Emitter Saturation Voltage:
-800 V
Maximum Operating Frequency:
10 MHz
Height:
5.33mm
Width:
4.19mm
Length:
5.2mm
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
100 mA
Maximum Emitter Base Voltage:
-5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
100 mA
HTSUS:
8541.21.0075
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
DC Current Gain (hFE) (Min) @ Ic, Vce:
110 @ 2mA, 5V
Frequency - Transition:
150MHz
Voltage - Collector Emitter Breakdown (Max):
65 V
Transistor Type:
PNP
Vce Saturation (Max) @ Ib, Ic:
650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Packaging:
Bulk
Power - Max:
500 mW
ECCN:
EAR99
