Toshiba 2SC4738-GR(T5L,F,T NPN Bipolar Transistor, 0.15 A, 50 V, 3-Pin SSM

2SC4738-GR-T5L-F-T Toshiba 2SC4738-GR(T5L,F,T NPN Bipolar Transistor, 0.15 A, 50 V, 3-Pin SSM
2SC4738-GR(T5L,F,T
2SC4738-GR(T5L,F,T
ET14149852
Toshiba

Product Information

Minimum DC Current Gain:
120
Transistor Type:
NPN
Dimensions:
1.6 x 0.8 x 0.7mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
100 mW
Maximum Collector Emitter Saturation Voltage:
0.25 V
Maximum Collector Base Voltage:
60 V
Maximum Collector Emitter Voltage:
50 V
Height:
0.7mm
Width:
0.8mm
Length:
1.6mm
Package Type:
SSM
Number of Elements per Chip:
1
Maximum DC Collector Current:
150 mA
Maximum Emitter Base Voltage:
5 V
Transistor Material:
Si
Maximum Operating Temperature:
+125 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is NPN Bipolar Transistor 0.15 A 50 V 3-Pin SSM manufactured by Toshiba. The manufacturer part number is 2SC4738-GR(T5L,F,T. It features up to 120 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 1.6 x 0.8 x 0.7mm. The product is available in surface mount configuration. Provides up to 100 mw maximum power dissipation. The product has a maximum 0.25 v collector emitter saturation voltage . Additionally, it has 60 v maximum collector base voltage. Whereas features a 50 v of collector emitter voltage (max). In addition, the height is 0.7mm. Furthermore, the product is 0.8mm wide. Its accurate length is 1.6mm. The package is a sort of ssm. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 150 ma. It features a 5 v of maximum emitter base voltage. The transistor is manufactured from highly durable si material. It has a maximum operating temperature of +125 °c. It contains 3 pins. The product offers single transistor configuration.

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2SC4738, Silicon NPN Transistor for Audio Frequency General Purpose Amplifier Applications(Technical Reference)

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