Diodes Inc APT13003DZTR-G1 NPN High Voltage Bipolar Transistor, 1.5 A, 700 V, 3-Pin TO-92

APT13003DZTR-G1 Diodes Inc  NPN High Voltage Bipolar Transistor, 1.5 A, 700 V, 3-Pin TO-92
APT13003DZTR-G1
APT13003DZTR-G1
ET14108347
ET14108347
BJT & Bipolar Transistors
BJT & Bipolar Transistors
DiodesZetex

Product Information

Dimensions:
4.7 x 3.7 x 4.7mm
Maximum Collector Emitter Saturation Voltage:
0.4 V
Width:
3.7mm
Transistor Configuration:
Single
Maximum Operating Frequency:
4 (Min.) MHz
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
10 V
Maximum Base Emitter Saturation Voltage:
1.2 V
Maximum Emitter Base Voltage:
9 V
Length:
4.7mm
Maximum DC Collector Current:
1.5 A
Pin Count:
3
Minimum DC Current Gain:
5
Mounting Type:
Through Hole
Maximum Power Dissipation:
1.1 W
Maximum Collector Emitter Voltage:
700 V
Height:
4.7mm
Minimum Operating Temperature:
-65 °C
RoHs Compliant
Checking for live stock

This is Diodes Inc NPN High Voltage Bipolar Transistor 1.5 A 700 V 3-Pin TO-92 manufactured by DiodesZetex. The manufacturer part number is APT13003DZTR-G1. The given dimensions of the product include 4.7 x 3.7 x 4.7mm. The product has a maximum 0.4 v collector emitter saturation voltage . Furthermore, the product is 3.7mm wide. The product offers single transistor configuration. It carries 4 (min.) mhz of maximum operating frequency. The package is a sort of to-92. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. The transistor is a npn type. Additionally, it has 10 v maximum collector base voltage. In addition, the product has a maximum 1.2 v base emitter saturation voltage . It features a 9 v of maximum emitter base voltage. Its accurate length is 4.7mm. Moreover, it has a maximum DC collector current of 1.5 a. It contains 3 pins. It features up to 5 of minimum DC current gain. The product is available in through hole configuration. Provides up to 1.1 w maximum power dissipation. Whereas features a 700 v of collector emitter voltage (max). In addition, the height is 4.7mm. Whereas, the minimum operating temperature of the product is -65 °c.

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APT13003D 450V NPN HIGH VOLTAGE POWER TRANSISTOR(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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You will get a confirmation email regarding your order of Diodes Inc APT13003DZTR-G1 NPN High Voltage Bipolar Transistor, 1.5 A, 700 V, 3-Pin TO-92. You can also check on our website or by contacting our customer support team for further order details on Diodes Inc APT13003DZTR-G1 NPN High Voltage Bipolar Transistor, 1.5 A, 700 V, 3-Pin TO-92.
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