NXP PHE13005 NPN Transistor, 4 A, 400 V, 3-Pin TO-220AB

PHE13005 NXP  NPN Transistor, 4 A, 400 V, 3-Pin TO-220AB
PHE13005
WeEn Semiconductors Co., Ltd

Product Information

Minimum DC Current Gain:
10
Transistor Type:
NPN
Dimensions:
10.3 x 4.7 x 16mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
75 W
Maximum Collector Emitter Saturation Voltage:
1 V
Maximum Collector Base Voltage:
700 V
Maximum Collector Emitter Voltage:
400 V
Maximum Base Emitter Saturation Voltage:
1.2 V
Maximum Operating Frequency:
60 Hz
Height:
16mm
Width:
4.7mm
Length:
10.3mm
Package Type:
TO-220AB
Number of Elements per Chip:
1
Maximum DC Collector Current:
4 A
Maximum Emitter Base Voltage:
9 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is NXP NPN Transistor 4 A 400 V 3-Pin TO-220AB manufactured by WeEn Semiconductors Co., Ltd. The manufacturer part number is PHE13005. It features up to 10 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 10.3 x 4.7 x 16mm. The product is available in through hole configuration. Provides up to 75 w maximum power dissipation. The product has a maximum 1 v collector emitter saturation voltage . Additionally, it has 700 v maximum collector base voltage. Whereas features a 400 v of collector emitter voltage (max). In addition, the product has a maximum 1.2 v base emitter saturation voltage . It carries 60 hz of maximum operating frequency. In addition, the height is 16mm. Furthermore, the product is 4.7mm wide. Its accurate length is 10.3mm. The package is a sort of to-220ab. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 4 a. It features a 9 v of maximum emitter base voltage. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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PHE13005 Silicon diffused power transistor datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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