WeEn Semiconductors Co., Ltd PHE13009 NPN Transistor, 12 A, 700 V, 3-Pin TO-220AB

PHE13009 WeEn Semiconductors Co., Ltd  NPN Transistor, 12 A, 700 V, 3-Pin TO-220AB
PHE13009
WeEn Semiconductors Co., Ltd

Product Information

Minimum DC Current Gain:
6
Transistor Type:
NPN
Dimensions:
10.3 x 4.5 x 15.8mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
80 W
Maximum Collector Emitter Saturation Voltage:
2 V
Maximum Collector Base Voltage:
700 V
Maximum Collector Emitter Voltage:
700 V
Maximum Base Emitter Saturation Voltage:
1.6 V
Maximum Operating Frequency:
60 Hz
Height:
15.8mm
Width:
4.5mm
Length:
10.3mm
Package Type:
TO-220AB
Number of Elements per Chip:
1
Maximum DC Collector Current:
12 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is NPN Transistor 12 A 700 V 3-Pin TO-220AB manufactured by WeEn Semiconductors Co., Ltd. The manufacturer part number is PHE13009. It features up to 6 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 10.3 x 4.5 x 15.8mm. The product is available in through hole configuration. Provides up to 80 w maximum power dissipation. The product has a maximum 2 v collector emitter saturation voltage . Additionally, it has 700 v maximum collector base voltage. Whereas features a 700 v of collector emitter voltage (max). In addition, the product has a maximum 1.6 v base emitter saturation voltage . It carries 60 hz of maximum operating frequency. In addition, the height is 15.8mm. Furthermore, the product is 4.5mm wide. Its accurate length is 10.3mm. The package is a sort of to-220ab. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 12 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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ESD Control Selection Guide V1(Technical Reference)
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Power Transistor NPN 400V 12A TO-220AB Data Sheet(Technical Reference)

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