ON Semiconductor NST3906DXV6T1G

NST3906DXV6T1G ON Semiconductor
NST3906DXV6T1G
NST3906DXV6T1G
ON Semiconductor

Product Information

Dimensions:
1.7 x 1.3 x 0.6mm
Maximum Collector Emitter Saturation Voltage:
-0.25 V
Width:
1.3mm
Transistor Configuration:
Isolated
Maximum Operating Frequency:
1 kHz
Package Type:
SOT-563
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Transistor Type:
PNP
Maximum Collector Base Voltage:
-40 V
Maximum Base Emitter Saturation Voltage:
-0.85 V
Maximum Emitter Base Voltage:
-5 V
Length:
1.7mm
Maximum DC Collector Current:
200 mA
Pin Count:
6
Minimum DC Current Gain:
30
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Maximum Collector Emitter Voltage:
40 V
Height:
0.6mm
Minimum Operating Temperature:
-55 °C
Manufacturer Standard Lead Time:
17 Weeks
Current - Collector (Ic) (Max):
200mA
Detailed Description:
Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 200mA 250MHz 500mW Surface Mount SOT-563
Transistor Type:
2 PNP (Dual)
Frequency - Transition:
250MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
400mV @ 5mA, 50mA
Supplier Device Package:
SOT-563
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
500mW
Package / Case:
SOT-563, SOT-666
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 10mA, 1V
Manufacturer:
ON Semiconductor
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is NST3906DXV6T1G. The given dimensions of the product include 1.7 x 1.3 x 0.6mm. The product has a maximum -0.25 v collector emitter saturation voltage . Furthermore, the product is 1.3mm wide. The product offers isolated transistor configuration. It carries 1 khz of maximum operating frequency. The package is a sort of sot-563. It consists of 2 elements per chip. It has a maximum operating temperature of +150 °c. The transistor is a pnp type. Additionally, it has -40 v maximum collector base voltage. In addition, the product has a maximum -0.85 v base emitter saturation voltage . It features a -5 v of maximum emitter base voltage. Its accurate length is 1.7mm. Moreover, it has a maximum DC collector current of 200 ma. It contains 6 pins. It features up to 30 of minimum DC current gain. The product is available in surface mount configuration. Provides up to 500 mw maximum power dissipation. Whereas features a 40 v of collector emitter voltage (max). In addition, the height is 0.6mm. Whereas, the minimum operating temperature of the product is -55 °c. It has typical 17 weeks of manufacturer standard lead time. The maximum collector current includes 200ma. It features bipolar (bjt) transistor array 2 pnp (dual) 40v 200ma 250mhz 500mw surface mount sot-563. The transistor is a 2 pnp (dual) type. The transition frequency of the product is 250mhz. The 400mv @ 5ma, 50ma is the maximum Vce saturation. sot-563 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 40v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 500mw. Moreover, the product comes in sot-563, sot-666. Furthermore, 100 @ 10ma, 1v is the minimum DC current gain at given voltage. The on semiconductor's product offers user-desired applications.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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NST3906DXV6T1,5(Datasheets)
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Wire Bond 01/Dec/2010(PCN Design/Specification)
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Carrier Tape 15/Aug/2017(PCN Packaging)
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Mult Devices 27/Oct/2017(PCN Packaging)

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FAQs

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