Transistor Type:
PNP
Dimensions:
6.73 x 6.22 x 2.25mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
20 W
Maximum Collector Emitter Voltage:
-80 V
Maximum Emitter Base Voltage:
5 V dc
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Pin Count:
2 + Tab
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
8 A
HTSUS:
8541.29.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
80 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 4A, 1V
Frequency - Transition:
90MHz
REACH Status:
REACH Unaffected
edacadModel:
NJVMJD45H11G Models
edacadModelUrl:
/en/models/5404667
Transistor Type:
PNP
Vce Saturation (Max) @ Ib, Ic:
1V @ 400mA, 8A
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Qualification:
AEC-Q101
standardLeadTime:
11 Weeks
Current - Collector Cutoff (Max):
1µA
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
DPAK
Packaging:
Tube
Power - Max:
1.75 W
Base Product Number:
NJVMJD45
ECCN:
EAR99
