Transistor Type:
PNP
Dimensions:
6.73 x 6.22 x 2.25mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
20 W
Maximum Collector Emitter Voltage:
-100 V
Maximum Emitter Base Voltage:
5 V dc
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Pin Count:
3 + Tab
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
2 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
100 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPAK, TO-251AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 2A, 3V
Frequency - Transition:
25MHz
title:
MJD117-1G
REACH Status:
REACH Unaffected
edacadModel:
MJD117-1G Models
edacadModelUrl:
/en/models/1481735
Transistor Type:
PNP - Darlington
Vce Saturation (Max) @ Ib, Ic:
3V @ 40mA, 4A
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
20µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
IPAK
Packaging:
Tube
Power - Max:
1.75 W
Base Product Number:
MJD117
ECCN:
EAR99
