Base-Emitter Resistor:
47kΩ
Transistor Type:
NPN
Dimensions:
2.2 x 1.35 x 0.9mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
310 mW
Maximum Collector Emitter Voltage:
50 V
Package Type:
SOT-323 (SC-70)
Number of Elements per Chip:
1
Maximum DC Collector Current:
100 mA
Typical Resistor Ratio:
0.047
Transistor Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Typical Input Resistor:
2.2 kΩ
Resistor - Base (R1):
2.2 kOhms
Current - Collector (Ic) (Max):
100 mA
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Emitter Base (R2):
47 kOhms
Package / Case:
SC-70, SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 5mA, 10V
title:
MUN5235T1G
REACH Status:
REACH Unaffected
edacadModel:
MUN5235T1G Models
edacadModelUrl:
/en/models/1482758
Manufacturer:
onsemi
Transistor Type:
NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic:
250mV @ 1mA, 10mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Qualification:
-
standardLeadTime:
6 Weeks
Current - Collector Cutoff (Max):
500nA
Mounting Type:
Surface Mount
Grade:
-
Series:
-
Supplier Device Package:
SC-70-3 (SOT323)
Packaging:
Tape & Reel (TR)
Power - Max:
202 mW
Base Product Number:
MUN5235
ECCN:
EAR99
