Minimum DC Current Gain:
100
Transistor Type:
PNP
Dimensions:
3.04 x 1.4 x 1.01mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
710 mW
Maximum Collector Emitter Voltage:
-30 V
Maximum Emitter Base Voltage:
-5 V dc
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
1 A
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
30 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 500mA, 2V
edacadModel:
MMBT589LT1G Models
Frequency - Transition:
100MHz
Vce Saturation (Max) @ Ib, Ic:
650mV @ 200mA, 2A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/1481955
Transistor Type:
PNP
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
14 Weeks
Current - Collector Cutoff (Max):
100nA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3 (TO-236)
Power - Max:
310 mW
Base Product Number:
MMBT589
ECCN:
EAR99
