Minimum DC Current Gain:
20
Transistor Type:
NPN
Dimensions:
10.53 x 4.83 x 9.28mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
30 W
Maximum Collector Emitter Voltage:
90 (Breakdown) V dc
Maximum Emitter Base Voltage:
5 V dc
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
10 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
90 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 4A, 4V
Frequency - Transition:
2MHz
REACH Status:
REACH Unaffected
edacadModel:
MJF3055G Models
edacadModelUrl:
/en/models/919536
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
2.5V @ 3.3A, 10A
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
14 Weeks
Current - Collector Cutoff (Max):
1µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220FP
Packaging:
Tube
Power - Max:
2 W
Base Product Number:
MJF3055
ECCN:
EAR99
