Minimum DC Current Gain:
20
Transistor Type:
NPN
Dimensions:
10.29 x 4.83 x 9.65mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
100 W
Maximum Collector Emitter Voltage:
800 V
Maximum Emitter Base Voltage:
12 V
Package Type:
TO-262
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Pin Count:
3 + Tab
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
3 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
800 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 400mA, 3V
Frequency - Transition:
5MHz
REACH Status:
REACH Unaffected
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
2.5V @ 200mA, 1A
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
17 Weeks
Current - Collector Cutoff (Max):
100µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-262 (I2PAK)
Packaging:
Tube
Power - Max:
100 W
Base Product Number:
FJI5603
ECCN:
EAR99
