Minimum DC Current Gain:
22
Transistor Type:
NPN
Dimensions:
10.53 x 4.83 x 15.75mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
75 W
Maximum Collector Base Voltage:
700 V dc
Maximum Collector Emitter Voltage:
400 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
12 V dc
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
10 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
5 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
400 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
10 @ 2A, 1V
edacadModel:
BUL45D2G Models
Frequency - Transition:
13MHz
Vce Saturation (Max) @ Ib, Ic:
500mV @ 400mA, 2A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/920494
Transistor Type:
NPN
Package:
Tube
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
14 Weeks
Current - Collector Cutoff (Max):
100µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220
Power - Max:
75 W
Base Product Number:
BUL45
ECCN:
EAR99
