Transistor Type:
NPN
Dimensions:
10.53 x 4.83 x 9.28mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
70 W
Maximum Collector Emitter Voltage:
80 V dc
Maximum Emitter Base Voltage:
5 V dc
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
10 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
80 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 3A, 3V
edacadModel:
BDX33BG Models
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
2.5V @ 6mA, 3A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/1476199
Transistor Type:
NPN - Darlington
Package:
Tube
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
14 Weeks
Current - Collector Cutoff (Max):
500µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220
Power - Max:
70 W
Base Product Number:
BDX33
ECCN:
EAR99
