Transistor Type:
NPN
Dimensions:
10.53 x 4.83 x 15.75mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
125 W
Maximum Collector Base Voltage:
100 V dc
Maximum Collector Emitter Voltage:
100 V
Maximum Emitter Base Voltage:
5 V dc
Package Type:
TO-218
Number of Elements per Chip:
1
Maximum DC Collector Current:
10 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
10 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
100 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-247-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 5A, 4V
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
2V @ 20mA, 5A
REACH Status:
REACH Unaffected
Transistor Type:
NPN - Darlington
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
1mA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-3
Power - Max:
125 W
Base Product Number:
BDV65
ECCN:
EAR99
