Transistor Type:
PNP
Dimensions:
7.8 x 3 x 11.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
40 W
Maximum Collector Base Voltage:
100 V dc
Maximum Collector Emitter Voltage:
-100 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V dc
Package Type:
TO-225
Number of Elements per Chip:
1
Maximum DC Collector Current:
-4 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
4 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
100 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-225AA, TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 1.5A, 3V
edacadModel:
BD682G Models
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
2.5V @ 30mA, 1.5A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/918367
Transistor Type:
PNP - Darlington
Package:
Bulk
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
12 Weeks
Current - Collector Cutoff (Max):
500µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-126
Power - Max:
40 W
Base Product Number:
BD682
ECCN:
EAR99
