Transistor Type:
NPN
Dimensions:
9.9 x 4.5 x 14.2mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
40 W
Maximum Collector Emitter Voltage:
100 V
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
3 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
3 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
100 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
25 @ 1A, 4V
Frequency - Transition:
-
title:
BD241CTU
REACH Status:
REACH Unaffected
edacadModel:
BD241CTU Models
edacadModelUrl:
/en/models/975669
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
1.2V @ 600mA, 3A
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
300µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-3
Packaging:
Tube
Power - Max:
40 W
Base Product Number:
BD241
ECCN:
EAR99