Minimum DC Current Gain:
40
Transistor Type:
NPN
Dimensions:
7.8 x 3 x 11.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
25 W
Maximum Collector Emitter Voltage:
80 V dc
Maximum Emitter Base Voltage:
5 V dc
Package Type:
TO-225
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
2 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
80 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-225AA, TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
25 @ 1A, 2V
Frequency - Transition:
3MHz
Vce Saturation (Max) @ Ib, Ic:
600mV @ 100mA, 1A
REACH Status:
REACH Unaffected
Transistor Type:
NPN
Package:
Bulk
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
13 Weeks
Current - Collector Cutoff (Max):
100µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-126
Power - Max:
25 W
Base Product Number:
BD237
ECCN:
EAR99
