Transistor Type:
NPN
Dimensions:
5.2 x 4.19 x 5.33mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
625 mW
Maximum Collector Emitter Voltage:
30 V
Maximum Emitter Base Voltage:
10 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
1.2 A
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
30 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
30000 @ 20mA, 2V
edacadModel:
BC517-D74Z Models
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
1V @ 100µA, 100mA
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/976355
Transistor Type:
NPN - Darlington
Package:
Cut Tape (CT)
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
10 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
625 mW
Base Product Number:
BC517
ECCN:
EAR99
