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This is manufactured by onsemi. The manufacturer part number is AFGHL50T65SQDC. The transistor is a npn type. The given dimensions of the product include 15.87 x 4.82 x 20.82mm. The product is available in through hole configuration. Provides up to 238 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It carries 1 mhz of maximum operating frequency. The package is a sort of to-247. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 100 a. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 100 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Provide switching energy up to 131µj (on), 96µj (off). Features 2.1v @ 15v, 50a. The maximum collector emitter breakdown voltage of the product is 650 v. Td (on/off) value of 17.6ns/94.4ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 94 nc gate charge. In addition, it is reach unaffected. Test condition included 400v, 12.5a, 4.7ohm, 15v. It is shipped in tube package . Its typical moisture sensitivity level is not applicable. It has a long 17 weeks standard lead time. Features an IGBT field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is automotive, a grade of class. to-247-3 is the supplier device package value. The maximum power of the product is 238 w. Moreover, it corresponds to afghl50, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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