Transistor Type:
NPN
Dimensions:
5.2 x 4.19 x 5.33mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
300 mW
Maximum Collector Emitter Voltage:
50 V
Maximum Emitter Base Voltage:
10 V
Package Type:
TO-92
Number of Elements per Chip:
1
Typical Resistor Ratio:
1
Transistor Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Typical Input Resistor:
22 kΩ
Resistor - Base (R1):
22 kOhms
HTSUS:
8541.21.0075
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Emitter Base (R2):
22 kOhms
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
56 @ 5mA, 5V
Frequency - Transition:
250 MHz
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA
REACH Status:
REACH Unaffected
Transistor Type:
NPN - Pre-Biased
Package:
Cut Tape (CT)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
300 mW
Base Product Number:
FJN330
ECCN:
EAR99
