onsemi FJB3307DTM NPN Transistor, 8 A, 400 V, 3-Pin D2PAK (TO-263)

FJB3307DTM onsemi  NPN Transistor, 8 A, 400 V, 3-Pin D2PAK (TO-263)
FJB3307DTM
FJB3307DTM
onsemi

Product Information

Transistor Type:
NPN
Dimensions:
10.67 x 9.65 x 4.83mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
80 W
Maximum Collector Base Voltage:
700 V
Maximum Collector Emitter Voltage:
400 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
9 V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum DC Collector Current:
8 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
8 A
HTSUS:
8541.29.0095
Voltage - Collector Emitter Breakdown (Max):
400 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DC Current Gain (hFE) (Min) @ Ic, Vce:
5 @ 5A, 5V
edacadModel:
FJB3307DTM Models
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
3V @ 2A, 8A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/2444870
Transistor Type:
NPN
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
-
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-263 (D2PAK)
Power - Max:
1.72 W
Base Product Number:
FJB3307
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is NPN Transistor 8 A 400 V 3-Pin D2PAK (TO-263) manufactured by onsemi. The manufacturer part number is FJB3307DTM. The transistor is a npn type. The given dimensions of the product include 10.67 x 9.65 x 4.83mm. The product is available in surface mount configuration. Provides up to 80 w maximum power dissipation. Additionally, it has 700 v maximum collector base voltage. Whereas features a 400 v of collector emitter voltage (max). It carries 1 mhz of maximum operating frequency. It features a 9 v of maximum emitter base voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 8 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 8 a. It is assigned with possible HTSUS value of 8541.29.0095. The maximum collector emitter breakdown voltage of the product is 400 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. Furthermore, 5 @ 5a, 5v is the minimum DC current gain at given voltage. The 3v @ 2a, 8a is the maximum Vce saturation. In addition, it is reach unaffected. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). to-263 (d2pak) is the supplier device package value. The maximum power of the product is 1.72 w. Moreover, it corresponds to fjb3307, a base product number of the product. The product is designated with the ear99 code number.

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FJB3307D, High Voltage Fast Switching NPN Power Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Mult Dev Assembly/Material Chgs 15/Mar/2018(PCN Assembly/Origin)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Dev EOL 18/Oct/2018(PCN Obsolescence/ EOL)
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FJB3307D(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Tape and Box/Reel Barcode Update 07/Aug/2014(PCN Packaging)

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FAQs

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You will get a confirmation email regarding your order of onsemi FJB3307DTM NPN Transistor, 8 A, 400 V, 3-Pin D2PAK (TO-263). You can also check on our website or by contacting our customer support team for further order details on onsemi FJB3307DTM NPN Transistor, 8 A, 400 V, 3-Pin D2PAK (TO-263).
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