Transistor Type:
NPN
Dimensions:
1.65 x 0.9 x 0.8mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 mW
Maximum Collector Emitter Voltage:
50 V
Maximum Emitter Base Voltage:
6 V
Package Type:
SOT-416 (SC-75)
Number of Elements per Chip:
1
Maximum DC Collector Current:
100 mA
Typical Resistor Ratio:
0.047
Transistor Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Typical Input Resistor:
2.2 kΩ
Resistor - Base (R1):
2.2 kOhms
Current - Collector (Ic) (Max):
100 mA
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Emitter Base (R2):
47 kOhms
Package / Case:
SC-75, SOT-416
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 5mA, 10V
REACH Status:
REACH Unaffected
edacadModel:
DTC123JET1G Models
edacadModelUrl:
/en/models/1476554
Manufacturer:
onsemi
Transistor Type:
NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic:
250mV @ 1mA, 10mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
11 Weeks
Current - Collector Cutoff (Max):
500nA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SC-75, SOT-416
Packaging:
Tape & Reel (TR)
Power - Max:
200 mW
Base Product Number:
DTC123
ECCN:
EAR99
