Minimum DC Current Gain:
120
Transistor Type:
PNP
Dimensions:
6.7 x 3.7 x 1.65mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
800 mW
Maximum Collector Base Voltage:
-100 V dc
Maximum Collector Emitter Voltage:
-60 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
-6 V
Package Type:
SOT-223 (SC-73)
Number of Elements per Chip:
1
Maximum DC Collector Current:
-6 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3 + Tab
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
6 A
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
60 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1A, 2V
edacadModel:
NSS60600MZ4T1G Models
Frequency - Transition:
100MHz
Vce Saturation (Max) @ Ib, Ic:
350mV @ 600mA, 6A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/1792926
Transistor Type:
PNP
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
14 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-223 (TO-261)
Power - Max:
800 mW
Base Product Number:
NSS60600
ECCN:
EAR99
