onsemi BC327BU PNP Transistor, 800 mA, 50 V, 3-Pin TO-92

BC327BU onsemi  PNP Transistor, 800 mA, 50 V, 3-Pin TO-92
BC327BU
BC327BU
onsemi

Product Information

Transistor Type:
PNP
Dimensions:
4.58 x 3.86 x 4.58mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
625 mW
Maximum Collector Base Voltage:
-10 V
Maximum Collector Emitter Voltage:
-50 V
Maximum Operating Frequency:
20 MHz
Maximum Emitter Base Voltage:
-5 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
-800 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
800 mA
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
45 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 100mA, 1V
edacadModel:
BC327BU Models
Frequency - Transition:
100MHz
Vce Saturation (Max) @ Ib, Ic:
700mV @ 50mA, 500mA
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/975522
Transistor Type:
PNP
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
625 mW
Base Product Number:
BC327
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is PNP Transistor 800 mA 50 V 3-Pin TO-92 manufactured by onsemi. The manufacturer part number is BC327BU. The transistor is a pnp type. The given dimensions of the product include 4.58 x 3.86 x 4.58mm. The product is available in through hole configuration. Provides up to 625 mw maximum power dissipation. Additionally, it has -10 v maximum collector base voltage. Whereas features a -50 v of collector emitter voltage (max). It carries 20 mhz of maximum operating frequency. It features a -5 v of maximum emitter base voltage. The package is a sort of to-92. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of -800 ma. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 800 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 45 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). Furthermore, 100 @ 100ma, 1v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. The 700mv @ 50ma, 500ma is the maximum Vce saturation. In addition, it is reach unaffected. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na is the maximum current at collector cutoff. to-92-3 is the supplier device package value. The maximum power of the product is 625 mw. Moreover, it corresponds to bc327, a base product number of the product. The product is designated with the ear99 code number.

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BC327/328, PNP Epitaxial Silicon Transistor Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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Mult Dev Assembly Chgs 17/Nov/2020(PCN Assembly/Origin)
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Copper Lead Frame 12/Oct/2007(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Dev EOL 7/Jul/2021(PCN Obsolescence/ EOL)
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BC327(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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