onsemi FJPF13009H1TU NPN Transistor, 12 A, 400 V, 3-Pin TO-220

FJPF13009H1TU onsemi  NPN Transistor, 12 A, 400 V, 3-Pin TO-220
FJPF13009H1TU
onsemi

Product Information

Minimum DC Current Gain:
8, 15
Transistor Type:
NPN
Dimensions:
10.36 x 4.9 x 16.07mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
50 W
Maximum Collector Base Voltage:
700 V
Maximum Collector Emitter Voltage:
400 V
Maximum Operating Frequency:
4 MHz
Maximum Emitter Base Voltage:
9 V
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
12 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
12 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
400 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack, Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
6 @ 8A, 5V
Frequency - Transition:
4MHz
title:
FJPF13009H1TU
REACH Status:
REACH Unaffected
edacadModel:
FJPF13009H1TU Models
edacadModelUrl:
/en/models/4562756
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
3V @ 3A, 12A
Moisture Sensitivity Level (MSL):
Not Applicable
Current - Collector Cutoff (Max):
-
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220F-3 (Y-Forming)
Packaging:
Tube
Power - Max:
50 W
Base Product Number:
FJPF13009
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is NPN Transistor 12 A 400 V 3-Pin TO-220 manufactured by onsemi. The manufacturer part number is FJPF13009H1TU. It features up to 8, 15 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 10.36 x 4.9 x 16.07mm. The product is available in through hole configuration. Provides up to 50 w maximum power dissipation. Additionally, it has 700 v maximum collector base voltage. Whereas features a 400 v of collector emitter voltage (max). It carries 4 mhz of maximum operating frequency. It features a 9 v of maximum emitter base voltage. The package is a sort of to-220. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 12 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 12 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 400 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack, formed leads. Furthermore, 6 @ 8a, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 4mhz. In addition, it is reach unaffected. The 3v @ 3a, 12a is the maximum Vce saturation. Its typical moisture sensitivity level is not applicable. to-220f-3 (y-forming) is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 50 w. Moreover, it corresponds to fjpf13009, a base product number of the product. The product is designated with the ear99 code number.

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FJPF13009, NPN Silicon Transistor Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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TO220F Assy/Test Site 18/Dec/2023(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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Obsolete Notice 15/Dec/2022(PCN Obsolescence/ EOL)
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FJPF13009(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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