Minimum DC Current Gain:
33
Transistor Type:
NPN
Dimensions:
2.92 x 1.3 x 0.93mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
200 mW
Maximum Collector Emitter Voltage:
50 V
Maximum Emitter Base Voltage:
10 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Typical Resistor Ratio:
0.22
Transistor Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Typical Input Resistor:
2.2 kΩ
Resistor - Base (R1):
2.2 kOhms
HTSUS:
8541.21.0075
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Emitter Base (R2):
10 kOhms
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
33 @ 10mA, 5V
Frequency - Transition:
250 MHz
title:
FJV3115RMTF
REACH Status:
REACH Unaffected
edacadModel:
FJV3115RMTF Models
edacadModelUrl:
/en/models/1047735
Manufacturer:
onsemi
Transistor Type:
NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3
Packaging:
Tape & Reel (TR)
Power - Max:
200 mW
Base Product Number:
FJV311
ECCN:
EAR99
