Minimum DC Current Gain:
50
Transistor Type:
PNP
Dimensions:
15.8 x 5 x 20.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
100 W
Maximum Collector Base Voltage:
-200 V
Maximum Collector Emitter Voltage:
-140 V
Maximum Operating Frequency:
30 MHz
Maximum Emitter Base Voltage:
-6 V
Package Type:
TO-3P
Number of Elements per Chip:
1
Maximum DC Collector Current:
-10 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
10 A
HTSUS:
8541.29.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
140 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 3A, 4V
Frequency - Transition:
30MHz
REACH Status:
REACH Unaffected
edacadModel:
FJA4210OTU Models
edacadModelUrl:
/en/models/1056538
Transistor Type:
PNP
Vce Saturation (Max) @ Ib, Ic:
500mV @ 500mA, 5A
Moisture Sensitivity Level (MSL):
Not Applicable
Current - Collector Cutoff (Max):
10µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3P
Packaging:
Tube
Power - Max:
100 W
Base Product Number:
FJA4210
ECCN:
EAR99
