Minimum DC Current Gain:
20
Transistor Type:
NPN
Dimensions:
10.67 x 4.83 x 16.51mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
75 W
Maximum Collector Base Voltage:
1050 V
Maximum Collector Emitter Voltage:
400 V
Maximum Emitter Base Voltage:
14 V
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
5 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
5 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
400 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 800mA, 3V
Frequency - Transition:
-
title:
FJP5555TU
REACH Status:
REACH Unaffected
edacadModel:
FJP5555TU Models
edacadModelUrl:
/en/models/1054639
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 1A, 3.5A
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
10 Weeks
Current - Collector Cutoff (Max):
-
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-3
Packaging:
Tube
Power - Max:
75 W
Base Product Number:
FJP5555
ECCN:
EAR99
