onsemi KSB772YSTU PNP Transistor, 3 A, 30 V, 3-Pin TO-126

KSB772YSTU onsemi  PNP Transistor, 3 A, 30 V, 3-Pin TO-126
KSB772YSTU
onsemi

Product Information

Minimum DC Current Gain:
160
Transistor Type:
PNP
Dimensions:
8 x 3.25 x 11mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
10 W
Maximum Collector Base Voltage:
-40 V
Maximum Collector Emitter Voltage:
-30 V
Maximum Operating Frequency:
80 MHz
Maximum Emitter Base Voltage:
-5 V
Package Type:
TO-126
Number of Elements per Chip:
1
Maximum DC Collector Current:
-3 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
3 A
HTSUS:
8541.29.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
30 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-225AA, TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 1A, 2V
Frequency - Transition:
80MHz
title:
KSB772YSTU
REACH Status:
REACH Unaffected
Transistor Type:
PNP
Vce Saturation (Max) @ Ib, Ic:
500mV @ 200mA, 2A
Moisture Sensitivity Level (MSL):
Not Applicable
Current - Collector Cutoff (Max):
1µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-126-3
Packaging:
Tube
Power - Max:
1 W
Base Product Number:
KSB772
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is PNP Transistor 3 A 30 V 3-Pin TO-126 manufactured by onsemi. The manufacturer part number is KSB772YSTU. It features up to 160 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 8 x 3.25 x 11mm. The product is available in through hole configuration. Provides up to 10 w maximum power dissipation. Additionally, it has -40 v maximum collector base voltage. Whereas features a -30 v of collector emitter voltage (max). It carries 80 mhz of maximum operating frequency. It features a -5 v of maximum emitter base voltage. The package is a sort of to-126. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of -3 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 3 a. It is assigned with possible HTSUS value of 8541.29.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 30 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-225aa, to-126-3. Furthermore, 160 @ 1a, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 80mhz. In addition, it is reach unaffected. The 500mv @ 200ma, 2a is the maximum Vce saturation. Its typical moisture sensitivity level is not applicable. In addition, 1µa (icbo) is the maximum current at collector cutoff. to-126-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 1 w. Moreover, it corresponds to ksb772, a base product number of the product. The product is designated with the ear99 code number.

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Transistor GP BJT PNP 30V 3A TO126-3(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Mult Dev Assembly Chgs 17/Nov/2020(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Dev EOL 06/Oct/2023(PCN Obsolescence/ EOL)
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KSB772(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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FAQs

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