onsemi 2N5195G PNP Transistor, 4 A, 80 V, 3-Pin TO-225AA

2N5195G onsemi  PNP Transistor, 4 A, 80 V, 3-Pin TO-225AA
2N5195G
2N5195G
onsemi

Product Information

Minimum DC Current Gain:
20
Transistor Type:
PNP
Dimensions:
7.74 x 2.66 x 11.04mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
40 W
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
-80 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-225AA
Number of Elements per Chip:
1
Maximum DC Collector Current:
-4 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
4 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
80 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-225AA, TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 1.5A, 2V
Frequency - Transition:
2MHz
Vce Saturation (Max) @ Ib, Ic:
1.4V @ 1A, 4A
REACH Status:
REACH Unaffected
Transistor Type:
PNP
Package:
Bulk
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
6 Weeks
Current - Collector Cutoff (Max):
1mA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-126
Power - Max:
40 W
Base Product Number:
2N5195
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is PNP Transistor 4 A 80 V 3-Pin TO-225AA manufactured by onsemi. The manufacturer part number is 2N5195G. It features up to 20 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 7.74 x 2.66 x 11.04mm. The product is available in through hole configuration. Provides up to 40 w maximum power dissipation. Additionally, it has 80 v maximum collector base voltage. Whereas features a -80 v of collector emitter voltage (max). It carries 1 mhz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of to-225aa. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of -4 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 4 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 80 v. The product has -65°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-225aa, to-126-3. Furthermore, 20 @ 1.5a, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 2mhz. The 1.4v @ 1a, 4a is the maximum Vce saturation. In addition, it is reach unaffected. It is shipped in bulk package . Its typical moisture sensitivity level is not applicable. It has a long 6 weeks standard lead time. In addition, 1ma is the maximum current at collector cutoff. to-126 is the supplier device package value. The maximum power of the product is 40 w. Moreover, it corresponds to 2n5195, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Assembly Change 28/Dec/2020(PCN Assembly/Origin)
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2N5194, 95(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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