Priced to Clear:
Yes
Transistor Type:
NPN
Dimensions:
2.9 x 1.5 x 1.1mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
200 mW
Maximum Collector Base Voltage:
20 V
Maximum Collector Emitter Voltage:
10 V
Maximum Operating Frequency:
5.5 GHz
Maximum Emitter Base Voltage:
3 V
Package Type:
CP
Number of Elements per Chip:
1
Maximum DC Collector Current:
70 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
70mA
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
10V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 10mA, 5V
edacadModel:
55GN01CA-TB-E Models
Noise Figure (dB Typ @ f):
1.9dB @ 1GHz
Frequency - Transition:
4.5GHz
REACH Status:
REACH Unaffected
Gain:
9.5dB
edacadModelUrl:
/en/models/2748072
Transistor Type:
NPN
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
22 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
3-CP
Power - Max:
200mW
Base Product Number:
55GN01
ECCN:
EAR99